姓名 陳邦旭 Pang-Shiu Chen
   
職稱 教授兼系所主任
   
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學經歷 國立交通大學材料科學與工程博士
   
授課領域 材料科學概論、半導體製程與技術
   
領域專長 電子材料、奈米科技、微觀結構

 (A) 期刊論文

1.(SCI) Tzu-Wei Lin, Pang-Shiu Chen, Zheng-Ying Wang, Kai-Wei Zhuang, Su-Ching Chiu, Cheng-Hsiung Peng, Sheng-Wei Lee, “Tailoring transparence in MoOx/Ag/MoOx electrode through Ag by O2/Ar plasma exposure”, accepted by Ceramic International. 

2.(SCI) Cheng-Hsiung Peng, Pang Shiu Chen*, Yu-Wei Chang, Tzu Wei Lin, and S. W.Lee“Transparent  TiOx/Ag/WO3  stacked  composite  electrode  with  improved  moisture  resistance”, accepted by Journal Mater. Sci: Electronic Materials (2016) (*Corresponding author)

3.(SCI) Pang Shiu Chen*, Cheng-Hsiung Peng, Yu-Wei Chang, TzuWei Lin, and S. W. Lee, “Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design,” Advance in Materials Engineering, article No. 749524 (2016)

4.( SCI) Chien Liu, Ping-Guang Chen, Meng-Jie Xie, Shao-Nong Liu, Jun-Wei Lee, Shao-Jia Huang, Sally Liu, Yu-Sheng Chen, Heng-Yuan Lee, Ming-Han Liao, Pang-Shiu Chen, and Min-Hung Lee, Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack, Jap. J. Appl. Phys 55, 04EB08 (2016).

5.(SCI) H. Y. Lee, Y. S. Chen, P. S. Chen*, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. Z. Rahaman, W. S. Chen, F. T. Chen, M.-J. Tsai, M. H. Lee, and T. K. Ku, Impact of Self-Complementary Resistance Switch Induced by Over-RESET Energy on The Memory Reliability of Hafnium Oxide Based RRAM, Jap. J. Appl. Phys 53, 08LE01 (2014) (2014). (Corresponding author) 

6.(SCI) Yu-Sheng Chen, Pang-Shiu Chen, Heng-Yuan Lee, Tai-Yuan Wu, Kan-Hsueh Tsai, Frederick Chen, and Ming-Jinn Tsai, “Enhanced endurance reliability and low current operation for AlOx/HfOx Based Unipolar RRAM with Ni electrode”, accepted by Solid State Electronic (2014).(NSC 101-2221-E-159-019)

7.(SCI) Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wei-Su Chen, Kan-Hsueh Tsai, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, S. Z. Rahaman, Yu-De Lin, Frederick Chen, Ming-Jinn Tsai, and Tzu-Kun Ku, “Novel Defects-trapping TaOX/HfOX RRAM with Reliable Self-compliance, High Nonlinearity and Ultra-low Current”, Electron Device Letts 35(2), 202(2014).

8.(SCI) Cheng-Hsiung Peng, Pang Shiu Chen, Ching-Chih Chang High-temperature microwave bilayer absorber based on lithium aluminum silicate/ lithium aluminum silicate-SiC composite, accepted by Ceramic International (2013).

9.(SCI) Pang-Shiu Chen, Yu - Sheng Chen, Kan - Hsueh Tsai, Heng - Yuan Lee, “Polarity dependence of forming step on improved performance in Ti/HfOx/W with dual resistive switching mode”, Microelectronic Engineering, (NSC 101-2221-E-159-019)

10.(SCI) Chu-Chun Wu , Pang Shiu Chen*, Cheng-Hsiung Peng, Ching-Chiun Wang, “TiOx/Ag/TiOx multilayer for application as a transparent conductive electrode and heat mirror”, J. Materials Science, Materials in Electronic (2013). (2013) 24: 2461. (NSC 101-2221-E-159-019)  (NSC 101-2221-E-159-019)

11.(SCI) Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, “Impacts of post metallization annealing on the memory performance of Ti/HfO2 based resistive memory”, Semiconductor Science Technology 28, 025016 (2013). (NSC 101-2221-E-159-019)

12.(SCI) Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Tai-Yuan Wu, Kan-Hsueh Tsai, Pei-Yi Gu, Wei-Su Chen, Chen-Han Tsai, Frederick Chen, and Ming-Jinn Tsai, “Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices”, Microelectronic Engineering, 105, 40-45 (2013). (NSC 101-2221-E-159-019)

13.(SCI) Chia-Wen Zhong, Wen-Hsien Tzeng, Kou-Chen Liu, Horng-Chih Lin Kow-Ming Chang, Yi-Chun Chan, Chun-Chih Kuo, Pang-Shiu Chen, Heng-Yuan Lee, Frederick Chen, Ming-Jinn Tsai, Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices accepted by Surface & Coating technology. 

14.(SCI) Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Yu-Sheng Chen, Pang-Shiu Chen , Ming-Jinn Tsai and Yu-Lung Lo, “A 50ns Verify Speed in Resistive random access memory by using a Write Resistance Tracking Circuit” accepted by  IEICE TRANS. FUNDAMENTALS /COMMUN./ELECTRON./INF. & SYST (2012) E95-C, (6) 2012 June, 1128.

15.(SCI) Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Tai-Yuan Wu, Pei-Yi Gu, Frederick Chen, and Ming-Jinn Tsai, “Impact of flattened TiN electrode on the memory performance of HfO2 based Resistive Memory” Electrochem. Solid-State Letts vol. 15(5) H136 (2012). (NSC 99-2221-E-159-023)

16.(SCI) Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wenshing Liu , Pei-Yi Gu, Frederick Chen, and Ming-Jinn Tsai, “Improved endurance in ultrathin Al2O3 film with a reactive Ti layer based resistive memory” Solid State Electronics 77 (2012) 41. (NSC 99-2221-E-159-023)

17.(SCI) Wen-Hsien Tzeng, Chia-Wen Zhong, Kou-Chen Liu, Kow-Ming Chang, Horng-Chih Lin, Yi-Chun Chan, Chun-Chih Kuo, Feng-Yu Tsai, Ming Hong Tseng, Pang-Shiu Chen, Heng-Yuan Lee, Frederick Chen, and Ming-Jinn Tsai, “Resistive switching characteristics of multilayered (HfO2/Al2O3)n  n=19 thin film”, Thin Solid films 520 (8) p. 3415 (2012). 

18.(EI, invited) Y. S. Chen, H. Y. Lee, P. S. Chen, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. S. Sheu, W. P. Lin, C. H. Lin, P. F. Chiu, W. S. Chen, F. T. Chen, C. Lien, and M.-J. Tsai, “Challenges and Opportunities for HfOX Based Resistive Random Access Memory”, IEDM Tech. Digest. (2011).

19.(SCI) H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick T. Chen, Ming-Jinn Tsai, “Metal Oxide RRAM”,  Proceedings of IEEE vol 100(6), 1951, 2012.

20.(SCI) Chen Frederick T., LEE HengYuan, CHEN YuSheng, HSU YenYa, ZHANG LiJie, Chen Pang Shiu, CHEN WeiSu, GU PeiYi, LIU WenHsing,WANG SuMin, TSAI ChenHan, SHEU ShyhShyuan, TSAI MingJinn & HUANG Ru, “Resistance switching for RRAM applications”, Sci China, Inf. Sci, 2011, 54: 1073–1086. (Impact factor: 0.388)

21.(SCI) Kou-Chen Liu,  Wen-Hsien Tzeng, Kow-Ming Chang, Jiun-Jie Huang, Yun-Ju Le,; Ping-Hung Yeh, Pang-Shiu Chen, Heng-Yuan Lee, Frederick Chen, Ming-Jinn Tsai, “Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristic”, Thin Solid Films, 520 (4) p. 1246 (2011).

22.(SCI) Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Sum-Min Wang, Pei-Yi Gu, Yen-Ya Hsu, Chen-Han Tsai, Wei-Su Chen, Frederick Chen, Ming-Jinn Tsai and Chenhsin Lien, Robust High Resistance State and Improved Endurance of HfOx Resistive Memory by Suppression of Current Overshoot, by Electron Device Letts. 

23.(EI) L. Zhang, R. Huang, Y. Y. Hsu, F. T. Chen, H. Y. Lee, Y. S. Chen, W. S. Chen, P. Y. Gu, W. H. Liu, S. M. Wang, C. H. Tsai, M.-J Tsai, and P. S. Chen, “Statistical analysis of retention behavior and lifetime prediction of HfOX-based RRAM,” IEEE int. IRPS, pp. MY.8.1-MY.8.5, 2011. 

24.(SCI) Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Pei-Yi Gu, Frederick Chen1,and Ming-Jinn Tsai, “Impact of Engineered Ti layer on the Memory Performance of HfOx based resistive memory”, Electrochem. Solid-State Letts. (2010) 13(12) H423-H425. (NSC 98-2221-E-159-023)

25.(SCI) Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Pei-Yi Gu, Wen-Hsing Liu, Wei-Su Chen, Yen-Ya Hsu, Chen-Han Tsai, Frederick Chen, Ming-Jinn Tsai and Chenhsin Lien, “Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50 nm Scale by optimal Encapsulation Layer”, Electron Device Letts, 32(3), p.390 (2011).

26.(EI) H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Y. Y. Hsu, S. M. Wang, W. H. Liu, C. H. Tsai, S. S. Sheu, P. C. Chiang, W. P. Lin, C. H. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, “Evidence and solution of Over-RESET Problem for HfOX Based Resistive Memory with Sub-ns Switching Speed and High Endurance”, IEDM Tech. Digest. (2010) p. 460.

27.(SCI) Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Meng-Fan Chang, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Tai-Yuan Wu, Frederick T. Chen, Keng-Li Su, Ming-Jer Kao, Ming-Jinn Tsai, “Fast Access Speed Resistive RAM (RRAM) for Embedded Applications? by IEEE Design & Test of Computers (2011), 28, p. 64-71 (2011). 

28.(SCI) Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Tai-Yuan Wu, Ching-Chiun Wang, Pei-Jer Tzeng, Frederick Chen, Ming-Jinn Tsai and Chenhsin Lien, “An Ultra-Thin Forming-Free HfOx Resistance Memory with Excellent Electrical Performance”, Electron Device Letts. 31, p. 1473 (2010).

29.(SCI) Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Frederick Chen, and Ming-Jinn Tsai, “Improved bipolar resistive switching of HfOX/TiN stack with a reactive metal layer and post metal annealing”, Jap. J. Appl. Phys. 49, 04DD18 (2010). (NSC 98-2221-E-159-023)

30.(SCI, EI) S.W. Lee, S.H. Huang, S.L. Cheng, P. S. Chen, W.W. Wu,  ?Ni Silcide formation on the SiC/Si(001) layer“, Thin Solid Films 518 (24) 7394 (2010). 

31.(SCI, EI) J. D. Huang, Y. H. Chen, P. S. Chen, “Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO2 Grown on Strained SiGe”, Electrochem. Solid-State Lett., 13(2), pp. H45-H47 (2010).

32.(SCI) Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Peggy Gu, Chi-Wei Chen, Yen-Ya Hsu, Wen-Hsing Liu, Wei-Su Chen, Ming-Jinn Tsai, Pang-Shiu Chen, Shen-Chuan Lo and Ming-Wei Lai,  “Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: model and experimental results”, Current Applied Physics (2010)10 ,175.

33.(SCI) H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M.-J Tsai, and C. Lien, “Low power and nanosecond switching in robust hafnium oxide resistive memory with a thin Ti cap”, Electron Device Letts (2010) 31, p. 44.

34.(SCI) Chung Yuan Kung, Jun Dar Hwang, Yu Hong Chen, Pan Shiu Chen, and Hsun Joung Chan, “ Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide,” Jap. J. Appl. Phy. 48 (2009) 086503.

35.(SCI) H. Y. Lee, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, M.-J Tsai and C. Lien, “HfOx Bipolar Resistive Memory with Robust Endurance Using AlCu as Buffer Electrode,” Electron Device Letts (2009) 30,  p. 703 (2009). 

36.(EI) Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, “Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity, IEDM Tech. Digest, p. 105 (2009).

37.(EI) Pang Shiu Chen, Heng-Yuan Lee, Ching-Chiun Wang, Tsung-Lun Tsai, and Wun-Jun Tseng “Bipolar Resistive Switching for TiO2 films by use of plasma enhanced atomic layer deposition”, Journal of Chinese Electrical Engineering vol. 16 p. 295 (2009).

38.(SCI) Yan-Ru Chen, Chieh-Hsiung Kuan,_Yuen-Wuu Suen, Yu-Hwa Peng, Peng-Shiu Chen, Cha-Hsin Chao, Eih-Zhe Liang, Ching-Fuh Lin, and Hung-Chun Lo, “High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array”, Appl. Phys. Letts, 93, 083101, (2008).

 

Assistant Professor

39.(SCI) Heng Yuan Lee, Pang Shiu Chen, Tai Yuan Wu, Ching Chiun Wang, Pei Jer Tzeng Cha Hsin Lin, Frederick Chen, Ming-Jinn Tsai, and Chenhsin Lien, “Electrical evidence of unstable anodic interface in Ru/HfOx/TiN unipolar resistive memory”, Appl. Phys. Letts, 92, 142911, (2008).

40.(SCI)  P. S. Chen, S.W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing”, Appl. Surface Sci. 254, 6076 (2008).

41.(SCI) M.H. Lee, S.T. Chang, S.W. Lee, P. S. Chen, K.-W. Shen, and W.-C. Wang, “Strained-Si with carbon incorporation for MOSFET source/drain engineering”, Appl. Surface Sci., 254, 6147 (2008).

42.(SCI) Y. H. Chen, C. Y. Kung, J. D. Hwang, H. Y. Lin, H. J. Chan , P. S. Chen, , “Low temperature oxidation of SiGe by liquid phase deposition,” Appl. Surface Sci., 254 6034 (2008).

43.(SCI)  S.W. Lee, P. S. Chen, S.L. Cheng, M.H. Lee, H.T. Chang, C.H. Lee, and C.W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition”, Appl. Surface Sci., 254, 6261(2008).

44.(SCI) Y. H. Chen, J. D. Hwang, C. Y. Kung, P. S. Chen, C. S. Wei, C. K. Wu, and J. C. Liu, Improving the Performance of SiGe Metal–Semiconductor–Metal Photodetectors by Using an Amorphous Silicon Passivation Layer, Electronic Device Letter Vol 28 No.12 Dec 1111 (2007).

45.(EI) Pang Shiu Chen, Heng-Yuan Lee, Ching-Chiun Wang, Ming-Jinn Tsai, and Kou-Chen, “HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition”, in Materials and Processes for Nonvolatile Memories II, edited by Tingkai Li, Yoshihisa Fujisaki, J.M. Slaughter, Dimitris Tsoukalas (Mater. Res. Soc. Symp. Proc. Volume 997, Warrendale, PA, 2007), 0997-I07-04

46.(SCI) J.-W. Shi, Y.-S. Wu, Z.-R. Li, and P.-S. Chen  “Impact-Ionization-Induced Bandwidth-Enhancement of a Si/SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm with a Gain-Bandwidth Product of 428GHz”, IEEE Photonics Technology Letters 19 (7), 474 (2007)..

47.(SCI) Heng-Yuan Lee, Pang - Shiu Chen, Ching-Chiun Wang, Siddheswar Maikap, Pei-Jer Tzeng, Cha-Hsin Lin, Lurng-Shehng Lee, and Ming-Jinn Tsai “ Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory”¸ J. J. Appl. Phys 4B, 2175 (2007).

48.(SCI) J.D. Hwang, C.Y. Kung, Y.H. Chen, C.S. Wei and P. S. Chen “Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectors”, Thin Soild Films  515 , p. 4049 (2007). 

49.(SCI) J.D. Hwang, W.T. Chang, Y.H. Chen, C.Y. Kung, C.H. Hu, P.S. Chen, ”Suppressing the dark current of metal–semiconductor–metal SiGe/Si heterojunction photodetector by using asymmetric structure, Thin Soild Films 515, 3837 (2007).

50.(SCI) J.-W. Shi, J.-Y. Wu, S.-H. Hsieh, H.-C. Hsu, F.-H. Huang, P.-S. Chen , Ja-Yu Lu, C.-W. Liu, and C.-K. Sun, “High Responsivity and High Power Performance of Si/SiGe Based Avalanche Photodiode for 10-Gb/s Short-Reach Fiber Communication”, Applied Physics Letter Vol. 88, 193506, 2006 .

51.(SCI) Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Pang Shiu Chen and Chee Wee Liu, Japanese Journal of Applied Physics . Vol. 45, No. 5A, pp. 4006-4008, 2006.

52.(SCI) P. S. Chen, S. W. Lee, M. H. Lee, and C. W. Liu, “The growth of high-quality SiGe films with an intermediate Si layer for strained Si n-MOSFETs”, Semiconductor science and technology Vol. 21 pp. 479-485, 2006.

53.(SCI) P. S. Chen, S. W. Lee, and K. F. Liao, “Formation of high quality relaxed SiGe films with an intermediate Si:C layer”, Mater. Sci. Eng. B130 194 (2006).

54.(SCI) J. D. Hwang, W. T. Chang, Y.H. Chen, K.H. Hseih, P. S. Chen and J.C. Liu, “Low cost wavelength filter of SiGe photodetector with a-Si:H capped layer”, Applied Surface Science 252 (2006) 8702.

55.(SCI) Ming Shan Shieh, Pang Shiu Chen, M.-J. Tsai, and Tan Fu Lei, “The CMP Process and Cleaning Solution for Planarization of Strain-Relaxed SiGe Virtual Substrates in MOSFET Application”, J Electrochemical Soc 153 G144-G148 (2006).

56.(SCI) San Lein Wu, Yu Min Lin, Shoou Jinn Chang, Shin Chi Lu, Pang Shiu Chen, and Chee Wee Liu, “Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology”, Electronic Device Letter Vol 27 No.1 Jan 46 (2006).

57.(SCI) J.D. Hwang, W.T. Chang, K.H. Hseih, G.H. Yang, C.Y. Wu, and P. S. Chen, “Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2”, Thin Solid films 493 (2005) 203.

58.(SCI) K. C. Liu, S. Maikap, C. H. Wu, Y. S. Cheng, and P. S. Chen, “The impact of Hf metal pre-deposition on the physical and electrical properties of ultrathin HfO2 films on Si0.9954C0.0046/Si heterolayers”, Semiconductor science and technology 20, 1016 (2005).

59.(SCI) S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chou and L. J. Chen, P. S. Chen, M.-J. Tsai and C. W. Liu, ”Formation of SiCH6 mediated Ge quantum dots with strong field emission property by ultra-high vacuum chemical vapor deposition”, J. Appl. Phys. 98, 0735061 (2005).

60.(SCI, EI) S.W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C.W. Liu, T.Y. Chien, and C.T. Chia, “The growth of high-quality SiGe films with a buffer layer containing Ge quantum dots”, Thin Solid Films, 2005.

61.(SCI, EI) K. C. Liu, S. Mikap, Y. S. Chang, W. J. Chen, and P. S. Chen, “Temperature Dependence of Electrical Properties of HfO2 films on Strained SiC/Si Heterolayers”, accepted by Thin Solid films.

62.(SCI, EI) S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chou and L. J. Chen, P. S. Chen, M.-J. Tsai and C. W. Liu, “Field emission properties of self-assembled Si-capped Ge quantum dots”, accepted by Thin Solid films. (In press)

63.(SCI, EI) Ming Shan Shieh, Pang Shiu Chen, M. -J. Tsai, and Tan Fu Lei, “A novel dynamic threshold Voltage MOSFET (DTMOS) Using Heterostructure Channel of Si1-yCy Channel”, Electronic Device Letter Vol 26 No.10 Oct 667 (2005). 

64.(SCI, EI) Pei-Jer Tzeng, Siddheswar Maikap, Peng-Shiu Chen, Yu-Wei Chou, Chieh-Shuo Liang, and Lurng-Shehng Lee “The Reliability Characteristics of Hf-based Gate Dielectrics on Strained-Si1-xGex MOS Devices”, IEEE Transactions on Device and Materials Reliability 5 (2005) 168.

65.(SCI, EI) W. -C. Hua, M. H. Lee, P. S. Chen, S. C. Lu, M. -J. Tsai, and C. W. Liu, “Treading Dislocation Induced Low Frequency Noise in Strained-Si Field-Effect Transistors, ” Electronic Device Letter Vol 26 No. 9 Sep 667 (2005).

66.(EI) (Invite paper) P. S. Chen, M. H. Lee, M. –J. Tsai, ?“Strained CMOS technology with Ge”, 207th Meeting of Electrochemical Society, Quebec City, Canada, May. 15-20, 2005

67.(SCI, EI) Kou-Chen Liu, Sidhu Maikap and Pang-Shiu Chen, “Characteristics of Ultra Thin Hf-Silicate Gate Dielectrics on Si0.9954C0.0046/Si Heterolayers”, Japanese Journal of Applied Physics. 44, 2005, pp. 2447-2449

68.(SCI, EI) S. W. Lee, Y. L. Chieh and L. J. Chen, L. J. Chou, P. S. Chen, M. -J. Tsai, and C. W. Liu, “Strained Si n-channel metal-oxide-semiconductor transistor on relaxed SiGe film with an intermediate Si:C layer”, J. Vac. Sci. Technol. A23, 1145 (2005).

69.(SCI, EI) C.W. Liu, M. H. Lee, Y. C. Lee, and P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap “Evidence of Si/SiGe heterojunction roughness scattering, ” Appl. Phys. Lett. 85, 4974 (2004).

70.(SCI, EI) K. F. Liao, P. S. Chen, S. W. Lee, L. J. Chen, C. W. Liu, “Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing”, Nucl. Instr. and Methods B. 237 (2005) 217.

71.(SCI, EI) P. W. Li, W. M. Liao, David M. T. Kuo, and S. W. Lin, P. S. Chen, S. C. Lu and M.-J. Tsai, “Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature”, Appl. Phys. Lett. 85 1532 (2004). 

72.(SCI, EI) Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Pang Shiu Chen and Chee Wee Liu, “SiGe/Si PMOSFET Using Graded Channel Technique”, Mater Sci. in Semi. Processing. 8 (2005)347. 

73.(SCI, EI) P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.  J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy and Si1-yCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source”, Mater. Sci. in Semi. Processing. 8 (2005) 15.

74.(EI) P. S. Chen, Z. Pei, S. W. Li, M.  J. Tsai, C.W. Liu, “Structure and optical property of Ge self-assembled quantum dots with hot wall UHV/CVD”, accepted by 2004 ECS (USA). 

75.(SCI, EI) Y. H. Peng, Chih-Hsiung Hsu, P. S. Chen, M. -J. Tsai, C. H. Kuan, and C. W. Liu, “Electroluminescence evolution of Ge quantum-dot diodes with the fold number”, Appl. Phys. Lett. 85, 6107 (2004). This paper has been selected for the Dec. 27, 2004 issue of the Virtual Journal of Nanoscale Science & Technology. 

76.(SCI, EI) W. -C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, and K. M. Chen,” Ge Out-diffusion Effect on Flicker Noise in Strained-Si NMOSFETs,” “Electronic Device Letter 23, 693 (2004). 

77.(SCI, EI) P. S. Chen, M. –J. Tsai, Y. H. Peng, C. W. Liu, and S.W. Lee, “Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer”, phys. stat. sol. (b) 241(2004) 3650. 

78.(SCI, EI) P. W. Li, M. W. Liao, S. W. Lin, P. S. Chen, S. C. Lu and M.-J. Tsai, “Formation of atomic-scale germanium quantum dots by slective oxidation of SiGe/Si-on-insluator“, Appl. Phys. Letts 83 4628 (2003). This paper has been selected for the Dec. 3, 2003 issue of the Virtual Journal of Nanoscale Science & Technology. 

79.(SCI, EI) P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, "Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition," Electrochemical and Solid-State Letters 7, G201, (2004). 

80.(SCI, EI) B.-C. Hsu, S. T. Chang, P.-S. Kuo, P. S. Chen, C. W. Liu, J. –H. Lu, and C. H. Kuan, “Novel MOS Ge/Si Quantum Dot Infrared Photodetectors with Operating Temperature up to 200K,” IEEE Electron Device Lett 25, 544 (2004). 

81.(SCI, EI)  P. S. Chen, Z. Pei, Y. H. Peng, S. W. Lee, and M.–J. Tsai “Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition”, Mater. Sci. Eng. B108 (2004) 213–218. 

82.(SCI, EI) Zingway Pei; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; “A high-performance SiGe/Si multiple-quantum-well hetero-junction phototransistor” IEEE Electron Device Lett 24 643 (2003).

83.(SCI, EI) Wen-Hao Chang, An-Tai Chou, Wen-Yen Chen, Hsiang-Szu Chang, Tzu-Min Hsu, Zingway Pei, Pang-Shiu Chen, S. W. Lee, Li-Shyue Lai, S. C. Lu and M. –J. Tsai, “Room–temperature electroluminescence at 1.3 and 1.5 um from Ge/Si self-assembled quantum dots”, Appl. Phys. Lett, 83 2958 (2003). This paper has been selected for the OCT. 13, 2003 issue of the Virtual Journal of Nanoscale Science & Technology. (SCI)

84.(SCI, EI) B.-C. Hsu , S. T. Chang, T.-C. Chen, P.-S. Kuo, P. S. Chen, Z. Pei, and C. W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetectors ”, IEED EDL 24 (2003) p.318.

85.(SCI, EI) S.W. Lee, L. J. Chen, P.S. Chen, M.-J. Tsai, C.W. Liu, T.Y. Chien, and C.T. Chia, “Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si”, Appl, Phys. Lett. 83, 5283 (2003). (This paper has been selected for the Dec. 29, 2003 issue of the Virtual Journal of Nanoscale Science & Technology)

86.(SCI, EI) S.W. Lee, L.J. Chen, P. S. Chen, M.-J. Tsai, C.W. Liu, T.Y. Chien, and C.T. Chia, “The growth of high-quality SiGe films with an intermediate Si layer”, Thin Solid Films 447-448 302 (2004). 

87.(SCI,EI) Z.Pei, P. S. Chen, L.S.Lai, S.C. Lu , M.-J. Tsai, W. H. Chang, W.Y. Chen, A.T. Chou, and T.M. Hsu, “Room Temperature 1.3 and 1.5 mm Electroluminescence from Si/Ge Quantum dots (QDs)/Si Multi-layers”, Appl. Surf. Sci. 224, 165 (2004). 

88.(SCI, EI) W. Y. Chen, W. -H. Chang, A, T. Chou, T. M. Hsu, P. S. Chen, Zingway Pei and L. S. Lai, “Optical Properties of Stacked Ge/Si Quantum Dots with Different Spacer Thickness Grown by Chemical Vapor deposition”, Appl. Surf. Sci. 224, 148 (2004). 

89.(SCI, EI) S.W. Lee, L.J. Chen, P. S. Chen, M.-J. Tsai, C.W. Liu, W.Y. Chen, and T.M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments”, Appl. Surf. Sci. 224, 152 (2004). 

90.(SCI, EI) Wen-Hao Chang, Wen-Yen Chen, An-Tai Chou, and Tzu-Min Hsu, Pang Shiu Chen, Zingway Pei and Li-Shyue Lai, “Effects of Spacer Thickness on Optical Properties of Stacked Ge/Si Quantum Dots Grown by Chemical Vapor Deposition”, J. Appl. Phys. 93 4999 (2003). This paper has been selected for the Feb. 3, 2003 issue of the Virtual Journal of Nanoscale Science & Technology. 

91.(SCI, EI) C. W. Liu, B. –C. Hsu, K. F. Chen, M. H. Lee, C. -R. Shie, and P. S. Chen, “Strain-induced SiO2 Dots Grown by Liquid Phase Deposition”, Appl. Phys. Lett. 82, 589 (2003). This paper has been selected for the Feb. 3, 2003 issue of the Virtual Journal of Nanoscale Science & Technology. 

92.(SCI,EI) Peng-Shiu Chen, Yih-Chyang Hwang T.E. Heish ,Chih-Hsun Chu, “A Study of Ion Implantation Defects in Ge+-Preamorphized Silicon”, Journal of Applied Physics 86,5399 (1999). 

93. (SCI,EI)Peng-Shiu Chen, T.E. Heish ,Chih-Hsun Chu, “Solid Phase Epitaxy for Low Pressure Chemical Vapor Deposition Si Films induced by Ion Implantation”, Thin Solid Film 353, 274 (1999). 

94.(SCI,EI) Peng-Shiu Chen, T.E. Heish ,Chih-Hsun Chu, “Elimination of EOR Defects in Ge+-preamorphized Si by Carbon Implantation”, Journal of Applied Physics, 85, 3114 (1999). 

 

(B) 研討會論文

B. 1 國際研討會論文

,

1. Cheng-Hsiung Peng, Pang Shiu Chen, Tze-Wei Lin, S. W. Lee, Low Resistance Transparent TiOx/Ag/WO3 Multilayer Films on Flexible Substrate by E-Beam Evaporation,  IVC -20. 

2. Chang-Yen Hsieh, Cheng-Fang Xue, Yu-Chi Huang, Yu-Jun Yang, Cheng-Hsiung Peng, Pang-Shiu Chen, “TiOx/Metal/WO3 transparent electrodes with enhanced in-fra red transmittance”, in the 10th Asian Meeting on Electroceramics, Taipei.

3. Yu-Chi Huang, Pang-Shiu Chen, Cheng-Hsiung Peng, Characterization of Ag on dielectric layer under oxygen/argon plasma exposure, in the 10th Asian Meeting on Electroceramics, Taipei.

4. Chang-Yen Hsieh, Cheng-Fang Xue, Yu-Chi Huang, Yu-Jun Yang Cheng-Hsiung Peng,  Pang-Shiu Chen, “Thermal stability of low resistance and high transparent AZO films with an embedded Ag layer”, in the 10th Asian Meeting on Electroceramics, Taipei.

5. Y. P. Chang, W. N. Fan, K. Y. Lin, Cheng-Hsiung Peng , Gze-Wei Lin, S. W. Lee,"Effects of the precipitants on the haracteristics of the cobalt ferrite nanoparticles/reduced graphene oxide composites through hydrothermal process", in TACT 2015 International Thin Films Conference, P-B17-0289, Tainan.

6. W. N. Fan, K. Y. Lin, Y. P. Chang, Cheng-Hsiung Peng , Gze-Wei Lin, S. W. Lee,"Characterization of cobalt ferrite nanoparticles/reduced grapheme oxide composites as the microwave absorber", in TACT 2015 International Thin Films Conference,P-B16-0285, Tainan.

7. K. Y. Lin, W. N. Fan, Y. P. Chang, Cheng-Hsiung Peng , Gze-Wei Lin, S. W. Lee,"One-pot fast synthesis of microwave assisted hydrothermal process for cobalt ferrite nanoparticles/reduced grapheme oxide composites r", in TACT 2015 International Thin Films Conference, P-B9-0118, Tainan.                                                                

8. Jei Wen Lo, Zheng Ying Wang, Kai Wei Zhuang, Cheng-Hsiung Peng, Pang Shiu Chen, Gze-Wei Lin, S. W. Lee ,"Low resistance of transparent tungsten trioxide based multilayer films with an silver layer on flexible substrate by e-gun deposition", in TACT 2015 International Thin Films Conference,P-C77-0046, Tainan.

9. Kai Wei Zhuang, Zheng Ying Wang, Jei Wen Lo, Kui Yi Lin, Wei Ni Fan, Yu Pei Cheng, Cheng-Hsiung Peng, Pang Shiu Chen, "High transparent TiOx/Ag/TiOx electrodes on flexible substrate", 2015 Optics & Photonics Taiwan, international conference, 2015-SAT-P1002-P006, DEC 4-5 HsinChiu (2015). 

10. Zheng Ying Wang, Kai Wei Zhuang, Yu Pei Cheng,  Cheng-Hsiung Peng, Pang Shiu Chen,  Gze-Wei Lin, S. W. Lee ,"Low resistance of molybdenum trioxide films with an silver layer by sputtering at room temperature", in TACT 2015 International Thin Films Conference, P-C076-0045, Tainan. 

11. Cheng Hsiung Peng, Pang Shiu Chen, Tze-Wei Lin, S. W. Lee, " High transparency and low resistance of ITO/Ag/ITO stacked layer by sputtering" Proceedings of ISSP p. 134, Kyoto 2015. 

12. H. Y. Lee, P. S. Chen, Y. S. Chen, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. Z. Rahaman, W. S. Chen, F. T. Chen, M.-J. Tsai, and T. K. Ku, Impact of Self-Complementary Resistance Switch Induced by Over-RESET Energy on The Memory Reliability of Hafnium Oxide Based RRAM, accepted by The 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, Tokyo.

13. Yu-Sheng Chen, Pang-Shiu Chen1, Heng-Yuan Lee, Kan-Hsueh Tsai, Tai-Yuan Wu, Fred Chen, and Ming-Jinn Tsai, Ultra-high LRS Nonlinearity and high speed in HfOX Based Complementary Resistive Switch with Ti electrode for Vertical RRAM, accepted by Solid State Device & Materials Meeting, 2013, Fukuoka, PS-4-1.

14. (Invited talk) Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Shakh Ziaur Rahaman, Chen-Han Tsai, Kan-Hsueh Tsai, Tai Yuan Wu, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Li-Heng Lee, Tzu-Kun Ku, P. S. Chen, Resistance Instabilities in a Filament-based Resistive Memory, IEEE int. IRPS 2013 April 5E.1. 

15. C. C. Wang, J. J. Zhong, Y. R. Jhang, T. L. Tsai, and P. S. Chen, Low resistance and high visible transmittance of transparent ZnO based films with an embedded metal layer by sputtering, International Symposium on Sputtering and Plasma Processes 2013, Kyoto, Japan.

16. P. S. Chen, Y. S. Chen, H. Y. Lee, and W.S. Chen, “Effect of electrode on the electrical performance of TaOx layer by use of low temperature plasma oxidation”, accepted by International Symposium on Sputtering and Plasma Processes 2013, Kyoto, Japan.

17. C. H. Tsai, F. T. Chen, H.Y. Lee, Y.S. Chen, K.H. Tsai, T.Y. Wu, S.Z. Rahaman, P.Y. Gu, W. S. Chen, P.S. Chen, Z.H. Lin, P.L. Tseng, W.P. Lin, C.H. Lin, S.S. Sheu, M. J. Tsai and Y.K. Ku, Ti/HfO2 Based RRAM Operation Voltage Scaling For Embedded Memory, China Semiconductor Technology International Conference 2013.

18. H. Y. Lee, P. S. Chen, Y. S. Chen, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. Z. Rahaman, Y. T. Lin, W. S.Chen, F. T. Chen, M.-J. Tsai, and T. K. Ku, Scalability Issue in Ti/HfO Bipolar Resistive Memory with 1T-1R Configurationby Resistance Pinning Effect During 1st RESET and Its Solution, VLSI-TSA 2013 April, p. 31~ 32.

19. Kan-Hsueh Tsai, Pang-Shiu Chen, Tai-Yuan Wu, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Chen-Han Tsai, Pei-Yi Gu, S. Z. Rahaman, Yu-De Lin, Frederick Chen, Ming-Jinn Tsai, and Tzu-Kun Ku, “Good Memory Performance and Coexistence of Bipolar and Unipolar Resistive Switching for CMOS compatible Ti/HfOX/W memory,” by VLSI-TSA 2013 April p. 36~ 37.

 

20. T. Y. Wu, W. S. Chen, Y. S. Chen, P. S. Chen, H. Y. Lee, K. H. Tsai, C. H. Tsai, P. Y. Gu, S. Z. Rahaman Y. T. Lin, F. T. Chen, M. J. Tsai, and T. K. Ku, Improvement of Switching Uniformity and Scalability in 1T-1R HfOx-based Bipolar Resistive Memory with Zr Insertion Layer, VLSI-TSA 2013 April p. 38~ 39.

21. Yu-Sheng Chen, Pang-Shiu Chen, Heng-Yuan Lee, Kan-Hsueh Tsai, Tai-Yuan Wu, C.-H. Tsai, W. S. Chen, P. Y. Gu, F. Chen,and Ming -Jinn. Tsai, “Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory, Solid State Device & Materials Meeting, 2012, Kyoto, B-6-2.

22. Chu-Chun Wu , Pang Shiu Chen, Han Wen Tien, Ching-Chiun Wang, “TiOx/metal/TiOx multilayer for application as a transparent conductive electrode and heat mirror”, Accepted by IUMRS international conference in Asia, 2012, Boshan, Korea.

23. Chu-Chun Wu , Pang Shiu Chen, Han Wen Tien, Ching-Chiun Wang, “TiOx/Cu/TiOx multilayer for application as a transparent conductive electrode and heat mirror”, accepted by Thin film 2012, Singapore.

24. F. T. Chen, Y.-S. Chen, H.-Y. Lee, W.-S. Chen, P.-Y. Gu, T.-Y. Wu, C.-H. Tsai, Y.-Y. Liao, P.-S. Chen, S.-S. Shyuan, P.-F. Chiu, W.-P. Lin, C.-H. Lin, M.-J. Tsai, T. -K. Ku, Access Strategies for Resistive Random Access Memory (RRAM), China Semiconductor International Conference (CSTIC) 2012.

25. Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Kan-Hsueh Tsai, Wei-Su Chen, Chen-Han Tsai, Pei-Yi Gu, Yi-Ying Liao, Frederick Chen, Chen-Hsin Lien, and Ming-Jinn Tsai, “Suppressed Soft-errors and Highly Reduced Current for HfOX Based Unipolar RRAM by Inserting AlOX Layer”, accepted by VLSI-TSA 2012.

26. W. S. Chen, T. Y. Wu, S. Y. Yang, W. H. Liu, H. Y. Lee, Y. S. Chen, C. H. Tsai, P. Y. Gu, K. H. Tsai, H. W. Wei P. S. Chen, Y. H. Wang, F. T. Chen, and M.-J. Tsai, “Stabilization of Resistive Switching with Controllable Self-Compliant Ta2O5-based RRAM” accepted by VLSI-TSA 2012.

27. Chu Chun Wu, Pang Shiu Chen, Cheng-Hsiung Peng, and Ching-Chih Chang and Chih-Lung Wei, “Characterization of TiO2 based transparent conductive electrode”, IUMRS-international conference in Asia, Taipei, 2011.

28. Pang Shiu Chen, Yu Wei Chang, Chu Chun Wu, Bo Hao Tong, Tian Sing Lan, Cheng-Hsiung Peng, Ching-Chiun Wang, “Effect of Ag and ZnO thickness on the structural and optical properties of ZnO/Ag/ZnO stacked layer”, IUMRS-international conference in Asia, Taipei, 2011.

29. Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Tai-Yuan Wu, Wen-Hsing Liu, Pei-Yi Gu, Frederick Chen, and Ming-Jinn Tsai, “Characterization and improved endurance for HfO2 resistive memory with CMP treated TiN bottom electrode”, Solid State Device & Materials Meeting, 2011, Nagoya, pp. 319-320. (NSC 99-2221-E-159-023).

30. Pang-Shiu Chen, Tsung-Lun Tsai, Yu-Wei Chang, Cheng-Hsiung Peng, Ching-Chiun Wang, Low resistance and high visible transmittance of transparent ZnO films with an embedded metal layer by sputtering” , APS-IPW, Taipei, 2011.

31. Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee,Wenshing Liu , Pei-Yi Gu, Frederick Chen, and Ming-Jinn Tsai, Ultrathin Al2O3 film with a reactive Ti layer based resistive memory, International NanoElectronics Conference (INEC), June 21-24, 2011, Taiwan. (NSC 98-2221-E-159-023)

32. Yu-Sheng Chen, Wen-Hsing Liu, Heng-Yuan Lee, Pang-Shiu Chen, Sum-Min Wang, Chen-Han Tsai,  Yen-Ya Hsu, Pei-Yi Gu, Wei-Su Chen, Frederick Chen, Chen-Hsin Lien, and Ming-Jinn Tsai, “Impact of Compliance Current Overshoot on High Resistance State, Memory Performance, and Device Yield of HfOx Based Resistive Memory and Its Solution”, Proceedings of VLSI-TSA 2011, p. 108.

33. W. S. Chen, Y. S. Chen, Y. Y. Hsu, S. Y. Yang, W. H. Liu, H. Y. Lee, P. Y. Gu, C. H. Tsai, S. M. Wang, P. S. Chen, Y. H. Wang, F. T. Chen, and M. –J. Tsai, “IC process Compatible and Anodic Electrode Effect on Polarity and Performance of Hafnium Oxide RRAM”, Proceedings of VLSI-TSA 2011, p. 102. 

34. Ching-Chiun Wang, Pang-Shiu Chen, Chih-Yung Huang, Edward Yi Chang, “Tailoring structure, optical properties and electrical characteristics of ZnO:Al films prepared by atomic layer deposition”, APIC conference, Singapore (2010).

35. (Invited talk) Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, Y. Y. Hsu, W. H. Liu, C. H. Tsai, S. M. Wang, S. S. Sheu, P. C. Chiang, W. P. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, Solid State Device & Materials Meeting 2010, Tokyo, pp. 1106-1107. (NSC 98-2221-E-159-023)

36. Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Pei-Yi Gu, Frederick Chen, and Ming-Jinn Tsai, “Impact of Engineered Buried Ti layer on the Memory Performance of HfOx RRAM”, Solid State Device & Materials Meeting 2010, Tokyo, pp. 319-320. (NSC 98-2221-E-159-023)

37. Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, Pei-Yi Gu, Yen-Ya Hsu, Wen-Hsin Liu, Wei-Su Chen, Chen Han Tsai, Frederick Chen, Chen-Hsin Lien, and Ming-Jinn Tsai, “Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer”, VLSI-TSA 2010.

38. Pei-Yi Gu, Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Wei-Su Chen, Yen-Ya Hsu, Frederick Chen, and Ming-Jinn Tsai, “Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM”, VLSI-TSA 2010.

39. Tsung Lun Tsai , Yu Wei Chang, Pang Shiu Chen*, Cheng Hsiung Peng, Yan Bo Wang, and, “Tailoring resistance and shield of electromagnetic wave in zinc oxide with an embedded metal layer”, TACT 2009 international Thin Films Conference.

40. Chu Chum Wu, Yen Che Hsu, and Chum Hemg Chen, Tao Ke Ou, Chiem Lum Huamg and Pang Shiu Chen, “Characteristics of ZnO:Al thin films under pre-treatment of RF plasma” The sixth International Symposium on the Basic and Application of Plasma Technology, Hsin Chu (2009).

41. Yu Wei Chang, Pang Shiu Chen*, Cheng Hsiung Peng, Yan Bo Wang, and Tsung Lun Tsai, “Optical and structure properties of ZnO:Al by radio-frequency magnetron sputtering”, The sixth International Symposium on the Basic and Application of Plasma Technology, Hsin Chu (2009).

42. Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Frederick Chen, and Ming-Jinn Tsai,”Improved bipolar resistive switching of HfOX/TiN stack with a reactive metal layer and post metal annealing” Soild State Electronic Device and Materials, 2009, p-4-11.

43. Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Tai-Yuan Wu , Frederick T. Chen, Keng-Li Su, Ming-Jer Kao, Kuo-Hsing Cheng, Ming-Jinn Tsai, “A 5ns Fast Write Multi-Level Non-Volatile 1 K bits RRAM Memory with Advance Write Scheme,” accepted by VLSI circuit sym (2009).

44. Pang Shiu Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation and thermal stability in SiGe films with an inserted Si1-yCy layer”, accepted by sixth International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) (2009).

45. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, “Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO2 Based RRAM”, IEDM Tech. Digest, p. 297 (2008).

46. Y. S. Chen, T. Y. Wu, H. Y. Lee, P. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, Forming-free HfO2 Bipolar RRAM with Improved Endurance and High Speed Operation, accepted by VLSI-TSA 2009.

47. Kow Ming Chang, Wen Hsien Tzeng, Kow-Chen Liu, Pang Shiu Chen, Heng Yuan Lee, M. –J. Tsai, and Jin Ping Lin, “Effect of Top Electrode on the HfOx/TiN RRAM device, International Workshop on Dielectric Thin Films for future ULSI device: science ad technology. 

48. Pang Shiu Chen, Heng –Yuan Lee, Chin-Chiun, and Ming-Jinn Tsai, “Effect of top electrode on the operation mode of HfOx based resistance memory”, in 4th International Conference on Technological Advances of Thin Films & Surface Coating, Thin Films 2008, p. 174.

49. S.W. Lee, P. S. Chen, S.L. Cheng, M.H. Lee, H.T. Chang, C.H. Lee, and C.W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition”, in Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), p 155.

50. Heng-Yuan Lee, Pang-Shiu Chen, Ching-Chiun Wang, Siddheswar Maikap, Pei-Jer Tzeng, Cha-Hsin Lin, Lurng-Shehng Lee, and Ming-Jinn Tsai “ Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory”¸ The International Conference on Solid State Devices and Materials, Nagoya, 2006, Nagoya.

51.  Pang Shiu Chen, Heng-Yuan Lee, Ching-Chiun Wang, Ming-Jinn Tsai, and Kou-Chen, “HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition”, in Materials and Processes for Nonvolatile Memories II, Mater. Res. Soc. 2007 Spring Meeting. 

52.  P. S. Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation in SiGe films with a buried Si:B layer by H implantataion” in 4th International SiGe Technology and Device Meeting Abstract Book, May 11-14 (2008), p. 163.

53. Y. H. Chen, J. D. Huang, C. Y. Kung, P. S. Chen, and J. C. Liu, “Improving the Performance of SiGe Metal-Semiconductor-Metal Photodetectors by Using an Amorphous Silicon Passivation Layer”, in 4th International SiGe Technology and Device Meeting Abstract Book, May 11-14 (2008), p. 185.

54. H. M. Chen, Y. C. Lai, Y. H. Peng, P. S. Chen, and C. H. Kuan, “Effect of Si cap on electroluminescence performance of Ge quantum dot diodes”, in 4th International SiGe Technology and Device Meeting Abstract Book, May 11-14 (2008), p. 203.

55. Heng-Yuan Lee, Pang-Shiu Chen, Ching-Chiun Wang, Siddheswar Maikap, Pei-Jer Tzeng, Cha-Hsin Lin, Frederick Chen, Chen-Hsin Lien, and  Ming-Jinn Tsai,  “HfO2 Bipolar Resistive Memory Device with Roubust Endurance using AlCu as Electrode”, 2008 Int’l VLSI Technology, systems and Application, p. 146.

56. P. S. Chen, S.W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing”, in Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), p. 119.

57. M.H. Lee, S.T. Chang, S.W. Lee, P. S. Chen, K.-W. Shen, and W.-C. Wang, “Strained-Si with carbon incorporation for MOSFET source/drain engineering”, in Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), p. 109.

58. J.-W. Shi, J.-Y. Wu, S.-H. Hsieh, H.-C. Hsu, F.-H. Huang P.-S. Chen, Ja-Yu Lu, C.-W. Liu, and C.-K. Sun, ”High Responsivity and High Power Performance of Si/SiGe Based Avalanche Photodiode for 10-Gb/s Short-Reach Fiber Communication”, accepted by CLEO 2005.

59. . S. W. Lee, P. S. Chen, K. F. Liao, M. -J. Tsai, C. W. Liu, and L. J. Chen “Growth of High-Quality SiGe Films with a Buffer Layer Containing Ge Quantum Dots” accepted by Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4).

60. . P. -S. Kuo, C. -H. Lin, P. S. Chen and C. W. Liu, “The Current Transport Mechanism of MOS Photodetector with Pt Gate”, accepted by Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4).

61.  Y. H. Peng, K. T. Chen, P. S. Chen, M. -J. Tsai, C. W. Liu, C. H. Kuan and S. C. Lee, “The Study of Electro-Luminescence from Ge/Si Quantum Dots and Si/SiGe Supperlattices”, accepted by Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4).

62.  S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu and L. J. Chen “Field Emission Properties of Self-Assembled Ge Quantum Dots Grown by Ultrahigh Vacuum Vapor Deposition”, accepted by Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4). 

63.  K. C. Liu, S. Mikap, Y. S. Chang, W. J. Chen, and P. S. Chen, “Temperature Dependence of Electrical Properties of HfO2 films on Strained SiC/Si Heterolayers”, accepted by Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4).

64. P. S. Chen, Z. Pei, L.-S. Lee, H.–P. Huang, S.–C. Lu, M.–J. Tsai, “BORON MEDIATION ON GE QUANTUM DOTS GROWTH ON SI (100) WITH UHVCVD” European Materials Research Society Spring Meeting 2002, Strasbourg (France).

65. B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, “High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short-Reach Integrated Optical Receivers with 1300 and 1550 nm Sensitivity”, IEDM tech. digest (2002) 91.

66. Z. Pei, C. S. Liang, L.S. Lai, Y. T. Yang, Y. M. Hsu, P. S. Chen, S. C. Lu, C. M. Liu, M.–J. Tsai, C. W. Liu, “High efficient 850 nm and 1310 nm Multiple quantum well SiGe/Si Heterojuction Phototransistors with 1.25 plus GHz Bandwidth”, IEDM tech digest (2002) 297.

67. S.W. Lee, P. S. Chen, Y.H. Peng, C.W. Liu and L.J. Chen , ” Improved quality of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments”, First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003, p.207.

68. P. S. Chen, S. W. Lee, Y. H. Peng, Z. Pei, M. –J. Tsai ,C. W. Liu, “Novel composite Ge/Si/Ge quantum dots with high PL efficiency and improved uniformity”, First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003, p.205.

69. Z.Pei, P. S. Chen, L. S. Lai, S.C. Lu , M.-J. Tsai, W. H. Chang, W.Y. Chen, A.T. Chou, and T.M. Hsu, “Room Temperature 1.3 and 1.5 mm Electroluminescence from Si/Ge Quantum dots (QDs)/Si Multi-layers”, First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003.

70. Y. H. Peng, Jen-Hsiang Lu, C. H. Kuan, C. W. Liu, Pang-Shiu Chen, Z. Pei, M.–J. Tsai, S. W. Lee, L. J. Chen, M. H. Ya, Y. F. Chen, “Schottky Quantum Dots Infrared Photo-detector with Far Infrared Response”, accepted by 1st ISTDM. 

71. W. Y. Chen, W. -H. Chang, A, T. Chou, T. M. Hsu, P. S. Chen, Zingway Pei and L. S. Lai, “Optical Properties of Stacked Ge/Si Quantum Dots with Different Spacer Thickness Grown by Chemical Vapor deposition”, 1st ISTDM p.203.

72. H. C. Chen, S. W. Lee, S. L. Cheng, L. J. Chen, P. S. Chen, and C. W. Liu, “Enhanced growth of amorphous interlayer in Ti thin films on strained Si/ relaced SiGe substrate”, First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003, p.185.

73. P. S. Chen, Y. T. Tesng, M.–J. Tsai, and C. W. Liu, “High throughput UHV/CVD SiGe and SiGe :C Process for SiGe HBT and strained Si FET”, 2002 Semiconductor Manufacturing Technology Workshop (Taiwan), Best paper award.

74.  S.W. Lee, P. S. Chen, Y.H. Peng, C.W. Liu and L.J. Chen,“The growth of high-quality uniform SiGe films by introducing an intermediate Si layer”, International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, USA, 2003, p.207.

75. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C.W. Liu, T.Y. Chien, and C.T. Chia, “Relief of strain in SiGe films with a buffer layer containing Ge quantum dots”, IUMRS-ICAM 2003, Yokohama, Japan, 2003, p.4.

76. Wen-Hao Chang, Wen-Yen Chen, An-Tai Chou, Tzu-Min Hsu, Pang-Shiu Chen, Zingway Pei, and Li-Shyue Lai, “Strain-Induced Material Intermixing in multiple-stacked Ge/Si quantum Dots Grown by Chemical Vapor Depsoition”, Proceedings of 5th Pacific Rim Conference on Lasers and Electro-Optics (CLEO/PR, 2003, Taipei, Taiwan) Vol. II, p.630.

77. Wen-Hao Chang, An-Tai Chou, Wen-Yen Chen, , Hsiang-Szu Chang, Tzu-Min Hsu, Zingway Pei, Pang-Shiu Chen, S. W. Lee, Li-Shyue Lai, S. C. Lu and M. –J. Tsai, “Room temperature Elecroluminescence at 1.3 and 1.5 um for Ge/Si Quantum – Dot Light-Emitting Diode”, Proceedings of 2003 International Symposium on Compound Semiconductor (ISCS, 2003, San Diego, USA), p.129.

78. Y. H. Peng, Ming-Jhen Sie, Pang-Shiu Chen, Jen-Hsiang Lu, C. H. Kuan, C. W. Liu,, M. H. Ya, and Y. F. Chen, “Ge Quantum Dots Infrared Photo-detector with Schottky Barrier to Reduce the Dark Current and Increase the Operational Temperature”, 2003 ITQP, Swiss.

79. M. H. Lee, P. S. Chen, Y. T. Tseng, Y. M. Hsu, S. W. Lee, J. -Y. Wei, C. –Y. Yu and C. W. Liu, “Performance Enhancement in strained Si NMOSFET on SiGe Virtual substrate”, SNDT, Taiwan, 2003.

80. F. Liao, K. F. Liao, H. C. Chen, S. W. Lee, P. S. Chen and C. W. Liu and L. J. Chen, “A study of the post-annealing effect on the oxidation behavior on the formation of SiGe-on insulator”, IUMRS-ICAM 2003, Yokohama, Japan, 2003, p.7.

81. B.-C. Hsu, Z. Pei, S. T. Chang, P.-S. Kuo, P. S. Chen, and C. W. Liu “Si-based Optoelectronics”, SNDT, Taiwan, 2003.

82. M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai. “Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs”, IEDM Tech. Digest, Washington D. C., pp. 69-72, 2003.

83. L. S. Lai. C. S. Liang, P. S. Chen, Y. M. Hsu, Y. H. Liu, Y. T. Yseng, S. C. Lu, M. –J. Tsai and C. W. Liu, “Optimal SiGe:C HBT Module for BiCMOS Application”, 2003 Int’l VLSI Technology, systems and Application, p. 113.

84. L. S. Lai, C. S. Liang, Y. T. Yseng,Z. Pei, Y. M. Hsu, P. S. Chen, S. C. Lu, M. –J. Tsai “Uniformity Improvement of SiGe HBT by Reduced Extrinsic Base Implanted Damage”, The International Conference on Solid State Devices and Materials, Nagoya, 2002, Nagoya.

85. J.-W. Shi, Z. Pei, Y.-M. Hsu, F. Yuan, C.-S. Liang, Y.-T. Tseng, P.-S. Chen, C. W. Liu, S.-C. Lu, M.-J, Tsai, “Si/SiGe Heterojunction Phototransistor”, International Topical Meeting on Microwave Photonics, Budapest, Hungary, July, 2003

86. B.-C Hsu, S. T. Chang, P.-S. Kuo, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan,“Multi-color MOS Ge/Si Quantum Dot Infrared Photodetectors with Operating Temperature up to 200 K,” accepted by International Semiconductor Device Research Symposium (ISDRS) ,Washington D.C, USA, 2003.

87. S. W. Lee, P. S. Chen, M. H. Lee, C. W. Liu and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer for strained Si nMOSFETs”, Second International SiGe Technology and Device Meeting (ISTDM), Frankfurt, Germany, 2004, p.141.

88. P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.  J. Tsai and C. W. Liu “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C2H4) precursor as carbon source” accepted by 2004 ISTDM.

89. Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Pang Shiu Chen, and Chee Wee Liu “SiGe/Si PMOSFET Using Graded Channel Technique”, accepted by 2004 ISTDM.

90. M. V. Shkil, V. V. Ilchenko, O. V. Tretyak, P. S. Chen, Z. Pei, M. –J. Tsai, “C-V and AS study of self-assembled Ge islands in Si p-n junction”, 4th WSEAS International conference on Nano-electronics and nanotechnology, Taiwan (2004).

91. P. S. Chen, S. W. Li, K. F. Liao, W. Y. Hiseh, M. J. Tasi and C. W. Liu, “UHV/CVD of SiGe:C/Si and SiC/Si heterostructure”, Proc of IUMRS-ICA-2004, p. 189.

92. (Invite talk)M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, S. Maikap, Y.-C. Lee, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M. –J. Tsai, “Noise Characteristics of Strained-Si MOSFETs”, 2004 ISTDM. 

93. Pei-Jer Tzeng, Chieh-Shuo Liang, Peng-Shiu Chen, Lurng-Shehng Lee Siddheswar Maikap, Wen-Zheng Lai, and Chee-Wee Liu, “Post Deposition Annealing Effects on the Reliability of ALD HfO2 films on strained Si0.8Ge0.2 Layers”, 2004 IFFA .

94. Wei-Ming Liao, Wei-Ting Lai, Pei-Wen Li, Ming-Ting Kuo, P. S. Chen, and M. –J. Tsai, “Strong Quantum Confinement and Coulomb Blockade Effects in Ge Quantum Dots/SiO2 system”, Nanotech 2005.

95. Yu Min Lin; San Lein Wu Shoou Jinn Chang, Pang Shiu Chen, Chee Wee Liu, “Impact of SiN on Performance in Novel CMOS Architecture Using Substrate Strained-SiGe and Mechanical strained-Si Technology”, accepted by ISTDM 2006 Princeton USA.

96. Y. H. Peng, H. R. Li, P. S. Chen, Y. W. Suen, C.H. Kuan, S.C. Lee “Characteristics of Superlattice LED with a Si0.8Ge0.2 or Si Capped Layer at Room Temperature”, accepted by ISTDM 2006 Princeton USA.

97. Chiang, S. W. Lu, Y. H. Peng, P. S. Chen, C. H. Kuan “Physical and Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor Containing Germanium Nanocrystals”, accepted by ISTDM 2006 Princeton USA.

 

   B. 2 國內研討會論文

 

1.Chu-Chun Wu , Pang Shiu Chen, Han Wen Tien, S. M. Lo, Low resistivity and high transparency TiOx/Cu/TiOx multilayer as a transparent conductive electrode, Symposium of National device laboratory 2010.

2.Pang-Shiu Chen, Chu-Chun Wu, Heng-Yuan Lee, Yu-Sheng Chen, Fred Chen, and M.-J. Tsai, “HfO2 form-free resistance random access memory by using post-metal annealing,” International Electron Device & Materials symposia, Taipei, 2011.

3.Yi-Sze Peng, C. C. Wu, Heng-Yuan Lee , Yu-Sheng Chen,W. S. Chen, W. H. Liu, and Pang-Shiu Chen, “MIM Capacitor with TaOx Dielectric by Use of Low Temperature Plasma Oxidation,” International Electron Device & Materials symposia, Taipei, 2010.

4.Pang-Shiu Chen, Yi-Sze Peng, Yu-Sheng Chen, Heng-Yuan Lee, Wen-Shing Liu , Pei-Yi Gu, Frederick Chen, and Ming-Jinn Tsai, Characterization of Al2O3 Based Resistive Memory with a Reactive Ti Capping”,  Symposium of National device laboratory 2010.

5.Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Yen Che Hsu, Chum Hemg Chen, Tao Ke Ou, and Chiem Lum Huang, Effect of Anodic Electrode on HfOX Based Resistive Memory, IEDMS 2009, 87.

6.J. P.Wang, Y. H. Tseng, S. S. Chung, H. Y. Lee, P. S. Chen, Y. S. Chen, F. T. Chen, P. Y. Gu, and M.-J. Tsai, The Understanding of Resistive Switching Mechanism in HfO2-Based Resistive Random Access Memory, IEDMS 2009, 417.

7.Pang Shiu Chen (陳邦旭), Wei-Yang Hsieh(謝維陽), Chao-Chi Chung (鍾兆奇),Chia-Hung Lin (林家鴻), and Chia-Hao Kuo(郭家豪), “Structural characteristics and therm al stability of strained Si on linearly compositional graded buffer”, 中國材料科學學會,p120.

8.林祐慶,林睿澤,劉邦祜,廖永詮,陳邦旭,張育瑋,蔡宗倫, 熱退火溫度與氣氛對ZnO:Al薄膜結晶性與電性的影響, 中國材料科學學會,p185.

9.Yu Wei Chang, Pang Shiu Chen, Cheng Hsiung Peng, Yin Bo Wang, and Tsung Lun Tsai, Optical and structure properties of ZnO:Al by radio-frequency magnetron sputtering, The sixth Asia-Pacific International Symposium on the Basic and application of plasma Technology,  p155 2009.

10.Chu Chum Wu, Yen Che Hsu, and Chum Hemg Chen, Tao Ke Ou, Chiem Lum Huamg, and Pang Shiu Chen, Characteristics of ZnO:Al thin films under pre-treatment of RF plasma, The sixth Asia-Pacific International Symposium on the Basic and application of plasma Technology, p159, 2009.

11.Tsung-Lun Tsai, Yu-Wei Chang, Pang-Shiu Chen, Cheng-hsiung Peng, Chao-Chen Yang, Tailoring resistance and shield of electromagnetic wave in Al-doped zinc oxide with an embedded metal layer, International Thin Films Conference, p. C160. 

12.Pang Shiu Chen, Heng-Yuan Lee, Ching-Chiun Wang, Tsung-Lun Tsai, and Wun-Jun Tseng “Bipolar Resistive Switching for TiO2 films by use of plasma enhanced atomic layer deposition”, p. 73, 2008 International Electron Devices and Materials Symposium (IEDMS)

13.Pang-Shiu Chen, Yu-Wei Chang, Yen-Chuan Chen, Sin-Yu Lin, “High-quality and thermal stability of relaxed SiGe files with an inserted Si1-y Cy layer for stained Si n-MOSFET”, p. 116, 2008中國材料科學學會年會, p. 120, 2008中國材料科學學會年會。

14.Pang-Shiu Chen ,Y. H Lee, C. C .Wang, Chi-Sheng Hsu, Characteristics of HfO2 based resistive memory, p. 116, 2008中國材料科學學會年會。

15.徐啟昇,陳邦旭,劉鈞瑋,林信宇,陳彥全, p. 78, 2008台灣鍍膜科技協會年會。

16.張育瑋,蔡宗倫,曾文君,陳邦旭,二氧化鉿在矽與銅金屬間擴散阻障層之研究”, p. 74, 2008台灣鍍膜科技協會年會。

17.Tsung-Lun Tsai (蔡宗倫), Wun-Jyun Tseng (曾文君), Sin-Yu Lin(林信宇), Pang-Shiu Chen (陳邦旭), “SiGe buffer with triangle Ge content profile for relaxed SiGe films on Si(100) by UHVCVD“, p. 74, 2008台灣鍍膜科技協會年會。

18.Pang-Shiu Chen, T.E. Heish ,Chih-Hsun Chu, “A Study of EOR Defect Annihilation in Ge+-Preamorphized Si”, EDMS Tainan (1998).

19.P. S. Chen, Y. H. Peng, S.W. Lee, M.–J. Tsai, and C. W. Liu, “Characteristics of Ge quantum dots infrared photodetecor”, APAM 2002 international conference on international Collaboration and networking: p. 18 (2002)

20.P. S. Chen, Y. T. Tseng, L. S. Lee, and S. C. Lu, “Characterization and growth of SiGe alloy with ultra-high vacuum chemical vapor deposition”, in Proceeding of the 2001 Annual conference of the Chinese Society for materials Science, Taichung, Taiwan.

21.S. W. Lee, P. S. Chen, L. J. Chen, and C. W. Liu, “Evolution of surface morphology of Ge quantum dots capped with a thin Si layer”, Proceeding of the 2002 Annual conference of the Chinese Society for materials Science, Taipei, Taiwan.

22.P. S. Chen, S. W. Li and K. F. Liao, “Low temperature epitaxial SixC1-x alloy on Si(100) by chemical vapor deposition”, Proceeding of the 2003 Annual conference of the Chinese Society for materials Science, Tainan, Taiwan.

23.Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Pei Wei Chien, Chun Hsin Lee, Yang Tai Tseng, Pang Shiu Chen, and Chee Wee Liu, “SiGe/Si HFET Using buried Channel structure”, EDMS 2003, Keelung, Taiwan.

24.P. S. Chen, Z. Pei, S. W. Li, M.  J. Tsai, C.W. Liu, “Structure and optical property of Ge self-assembled quantum dots with hot wall UHV/CVD”, accepted by 2004 ECS (USA).

25.W. M. Liao, P. W. Li, M. T. Kuo, P. S. Chen, and M.  J. Tsai “Electrical and Optical Properties of Ge Quantum-Dots Formed by Selective Oxidation of SiGe-on-Insulator and Room-Temperature Ge Single-Electron Transistors”, accepted by 2004 ISTDM (German).

26.W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen, “Comprehensive Flicker Noise Characterization of The Strained-Si NMOSFETs”, accepted by SNDT 2004.

27.K. T. Chen , Y. H. Peng , C. H. Hsu , and C. H. Kua, P. S. Chen and C. W. Liu, “Electroluminescence evolution of Ge quantum-dot diodes with the fold number”, 2004 CLEO/IQEC. (San Francisco). 

28.M. V. Shkil, V. V. Ilchenko, O. V. Tretyak, P. S. Chen, Z. W. Pei, and M.  J. Tsai, “Electrical Investigations of the Ge-Si systems with a reduced dimensionality”, accepted by 2nd ISTDM (German). 

29.W. M. Liao, P. W. Li, M. T. Kuo, P. S. Chen, and M.  J. Tsai “Electrical and Optical Properties of Ge Quantum-Dots Formed by Selective Oxidation of SiGe-on-Insulator and Room-Temperature Ge Single-Electron Transistors”, accepted by SNDT 2004.

30.P. S. Chen, S. W. Lee, M.H. Li, C.W. Liu and M.  J. Tsai, “Thin relaxed SiGe buffer for strained Si CMOS”, SMTW 2004, Hsin-Chu, Taiwan, 2004, p.79. (Best paper award).

31.P. S. Chen, M.  J. Tsai, and C. W. Liu, S. W. Lee, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition”, The 51th International Symposium of American Vacuum Society, Anaheim, USA, 2004.

32.S. W. Lee, Y. L. Chieh and L. J. Chen, P. S. Chen, M.-J. Tsai, and C. W. Liu, “Strained Si n-channel metal-oxide-semiconductor transistor on relaxed SiGe film with an intermediate Si:C layer”, The 51th International Symposium of American Vacuum Society, Anaheim, USA, 2004.

33.P. S. Chen, S.W. Lee, Y. H. Peng, C. W. Liu and M. –J. Tsai, “Formation of Ge/Si/Ge quantum dots with a thin Si layer”, accepted by Taiwan International Conference on Nano Science and Technology (Hsin Chu, Taiwan).

34.Y. S. Liu, S. Maikap, P. S. Chen and K. C. Liu, accepted by Taiwan International Conference on Nano Science and Technology (Hsin Chu, Taiwan).

35.P. S. Chen, K. F. Liao, Y. M. Lin, S.W. Lee, C.W. Liu, and M.  J. Tsai, “Influence of H and He implantation on surface morphology and relaxation in thin SiGe/Si (001)”, accepted by 15th Int’l conference on ion implantation, IIT 2004 (Hsin Chu, Taiwan).

36.K. F. Liao, S. W. Lee, L. J. Chen, P. S. Chen, and C. W. Liu, “Formation of thin relaxed SiGe buffer layer with H-implantation dose and thermal annealing”, accepted by 15th Int’l conference on ion implantation, IIT 2004 (Hsin Chu, Taiwan).

37.P. S. Chen, S. W. Lee, and K. F. Liao, “Relaxation and surface morphology of helium implanted strained SiGe on Si (100) substrate”, accepted by Proceeding of the 2003 Annual conference of the Chinese Society for materials Science, Hsin Chu, Taiwan.

38.P. S. Chen, S. W. Lee, Y. H. Peng, “Structure and room temperature photo-luminescence emission of stacked Ge/Si bilayers by chemical vapor deposition”, accepted by Proceeding of the 2003 Annual conference of the Chinese Society for Materials Science, Hsin Chu, Taiwan.

39.Y. S. Liu, S. Maikap, P. S. Chen, and K. C. Liu, “Effect of Hf metal predeposition on the electrical properties of HfO2 films on tensile strained Si0.9954C0.0046 layers”, accepted by The International Conference on Solid State Devices and Materials, Nagoya, 2004, Nagoya.

40.K. F. Liao, S. W. Lee, L. J. Chen, and P. S. Chen, “Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing”, accepted by Proceeding of the 2003 Annual conference of the Chinese Society for Materials Science, Hsin Chu, Taiwan.

41.S. W. Lee, K. F. Liao, L. J. Chen, P. S. Chen, M.-J. Tsai, C.W. Liu, T.Y. Chien, and C.T. Chia, “Growth of high quality SiGe films with a buffer layer containing Ge quantum dots”, accepted by Proceeding of the 2003 Annual conference of the Chinese Society for Materials Science, Hsin Chu, Taiwan.

42.Chun Hsin Lee, San Lein Wu, Pei Lun Lo, Shoou Jinn Chang, Yu Min Lin, Pang Shiu Chen, Chee Wee Liu, Tzu Juei Wang ,and Pei Wei. Chien “Inductively coupled plasmas etching of Si/Si1-xGex in CF4/Ar and Cl2/Ar”, accepted by the 3rd Asian Conference on Chemical Vapor Deposition.

43.Y. H. Peng, K. T. Chen, C. W. Liu, C. H. Kuan, P. S. Chen, M. –J. Tsai, “Electro-luminescence comparison of Ge/Si quantum dots and Si/SiGe supperlattices at room temperature”, accepted by 2004 IEDMS, Hsin Chu, Taiwan. pp. 415

44.C. C. Lee, Y. –H. Liu, T. –C. Chen, C. _Y. Yu, P. S. Chen, Y. T. Tseng, and C. W. Liu, “The material and electrical characteristics of SiGeC alloy grown by chemical vapor deposition using C2H4 precursors”, 2004 IEDMS, Hsin Chu, Taiwan. pp. 71.

45.C. H. Lin, P. S. Kuo, P. S. Chen, C. Y. Yu, and C. W. Liu, “Raising operation temperature of MOS Ge/Si quantum dot Infrared Photodetector”, 2004 IEDMS, Hsin Chu, Taiwan pp. 277.

46.P. S. Kuo, C. H. Lin, B. S. Hsu, P. S. Chen, and C. W. Liu, “A dual-bias operated MOS photo-detector with Pt gate”, 2004 IEDMS, Hsin Chu, Taiwan. pp. 415.

 

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